Progress in Planar Feature Spatial Reconstruction for Atom Probe Tomography

Dynamic reconstruction for atom probe tomography.

Progress in the reconstruction for atom probe tomography has been limited since the first implementation of the protocol proposed by Bas et al. in 1995. This approach and those subsequently developed assume that the geometric parameters used to build the three-dimensional atom map are constant over the course of an analysis. Here, we test this assumption within the analyses of low-alloyed mater...

Atom probe tomography in nanoelectronics

The role of laser assisted atom probe tomography (APT) in microelectronics is discussed on the basis of various illustrations related to SiGe epitaxial layers, bipolar transistors or MOS nano-devices including gate all around (GAA) devices that were carried out at the Groupe de Physique des Matériaux of Rouen (France). 3D maps as provided by APT reveal the atomic-scale distribution of dopants a...

Approaches for Promoting Accurate Atom Probe Reconstruction

Comparison of atom probe tomography (APT) results from different instruments, different users, or different samples requires confidence in overall reconstruction accuracy. The conventional reconstruction algorithm utilizes a single point-projection onto a spherical surface [1,2]. Although there are a limited number of parameters used to prescribe how detector events are converted to a 3D set of...

Direct Observation of Dopants Distribution and Diffusion in GaAs Planar Nanowires with Atom Probe Tomography.

Intentional and unintentional doping in semiconductor nanowires undoubtedly have significant impact on the device performance. However, spatially resolved precise determination of dopant concentration is challenging due to insufficient sensitivity and resolution of conventional techniques. In this paper, quantitative 3D distribution of Si and Zn dopants in planar GaAs nanowires and their interf...

Toward atom probe tomography of microelectronic devices